april 2009 ?2009 fairchild semiconductor corporation FDMS7670 rev . d www.fairchildsemi.com 1 FDMS7670 n-channel powertrench ? mosfet FDMS7670 n-channel powertrench ? mosfet 30 v, 3.8 m ? features ? max r ds(on) = 3.8 m ? at v gs = 10 v, i d = 21 a ? max r ds(on) = 5.0 m ? at v gs = 4.5 v, i d = 17 a ? advanced package and silicon design for low r ds(on) and high efficiency ? next generation enhanced body diode technology, engineered for soft recovery. provides sc hottky-like performance with minimum emi in sync buc k converter applications ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficiency and to minimize switch node ringing of dc/dc converters us ing either synchronous or conventional switching pwm cont rollers. it has been optimized for low gate charge, low r ds(on) , fast switching speed and body diode reverse recovery performance. applications ? imvp vcore switching for notebook ? vrm vcore switching for desktop and server ? oringfet / load switch ? dc-dc conversion bottom power 56 top pin 1 g s s s d d d d g s s s d d d d 5 6 7 8 3 2 1 4 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 42 a -continuous (silicon limited) t c = 25 c 105 -continuous t a = 25 c (note 1a) 21 -pulsed 150 e as single pulse avalanche energy (note 3) 144 mj p d power dissipation t c = 25 c 62 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 2.0 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS7670 FDMS7670 power 56 13 ?? 12 mm 3000 units
www.fairchildsemi.com 2 FDMS7670 rev . d FDMS7670 n-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 15 mv / c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.25 1.9 3.0 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -7 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 21 a 2.9 3.8 m ? v gs = 4.5 v, i d = 17 a 4.1 5.0 v gs = 10 v, i d = 21 a, t j = 125 c 4.0 5.3 g fs forward transconductance v ds = 5 v, i d = 21 a 136 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 3085 4105 pf c oss output capacitance 990 1315 pf c rss reverse transfer capacitance 75 115 pf r g gate resistance 1.2 2.5 ? t d(on) turn-on delay time v dd = 15 v, i d = 21 a, v gs = 10 v, r gen = 6 ? 15 26 ns t r rise time 612ns t d(off) turn-off delay time 31 50 ns t f fall time 510ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 21 a 40 56 nc q g total gate charge v gs = 0 v to 4.5 v 17 24 nc q gs gate to source charge 9.8 nc q gd gate to drain ?miller? charge 4.4 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.7 0.95 v v gs = 0 v, i s = 21 a (note 2) 0.8 1.1 t rr reverse recovery time i f = 21 a, di/dt = 100 a/ s 38 61 ns q rr reverse recovery charge 19 34 nc t a reverse recovery fall time 14 ns t b reverse recovery rise time 24 ns s softness (t b /t a ) 1.7 t rr reverse recovery time i f = 21 a, di/dt = 300 a/ s 32 51 ns q rr reverse recovery charge 34 54 nc notes : 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3. e as of 144 mj is based on starting t j = 25 c, l = 1 mh, i as = 17 a, v dd = 27 v, v gs = 10 v. 100% test at l = 0.3 mh, i as = 22 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
www.fairchildsemi.com 3 FDMS7670 rev . d FDMS7670 n-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 30 60 90 120 150 v gs = 3.5 v v gs = 10 v pulse duration = 80 s duty cycle = 0.5% max v gs = 4 v v gs = 5 v v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0306090120150 0 1 2 3 4 5 v gs = 3.5 v pulse duration = 80 s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4 v v gs = 4.5 v v gs = 5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 21 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 3 6 9 12 15 t j = 125 o c i d = 21 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ? ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 30 60 90 120 150 t j = 150 o c v ds = 5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) 500 s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 FDMS7670 rev . d FDMS7670 n-channel powertrench ? mosfet figure 7. 0 10203040 0 2 4 6 8 10 i d = 21 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 100 1000 50 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 5000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 100 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) 40 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 100 120 v gs = 4.5 v limited by package r jc = 2.0 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 10 s 1 s dc 100 ms 10 ms 1 ms 100 us i d , drain current (a) v ds , drain to source voltage (v) 300 this area is limited by r ds(on) single pulse t j = max rated r ja = 125 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 10000 single pulse r ja = 125 o c/w t a = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 FDMS7670 rev . d FDMS7670 n-channel powertrench ? mosfet figure 13. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.0005 0.001 0.01 0.1 1 2 single pulse r ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a junction-to-ambient transient thermal response curve figure 14. -120 -90 -60 -30 0 30 60 -5 0 5 10 15 20 25 di/dt = 300 a/ s time (ns) current (a) 0 30 60 90 120 150 180 -5 0 5 10 15 20 100 di/dt = 300 a/ s time (ns) current (a) b o d y d i o d e r e v e r s e recovery characteristics figure 15. typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 FDMS7670 rev . d FDMS7670 n-channel powertrench ? mosfet dimensional outlin e and pad layout
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